Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes
Identifieur interne : 008651 ( Main/Repository ); précédent : 008650; suivant : 008652Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes
Auteurs : RBID : Pascal:07-0017458Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
The authors report on recent advances in the development of mid-, long-, and very long-wavelength infrared (MWIR, LWIR, and VLWIR) type-II InAs/GaSb superlattice infrared photodiodes. The residual carrier background of binary type-II InAs/GaSb superlattice photodiodes of cut-off wavelengths around 5 μm has been studied in the temperature range between 10 and 200 K. A four-point, capacitance-voltage technique on mid-wavelength and long-wavelength type-II InAs/GaSb superlattice infrared photodiodes reveal residual background concentrations around 5 x 1014 cm-3. Additionally, recent progress towards LWIR photodiodes for focal plane array imaging applications is presented. Single element detectors with a cut-off wavelength, λc,50%, of 10.2 μm demonstrated detectivities of approximately 1×1011 cmHz1/2W-1 and quantum efficiencies of 32% at the peak responsivity wavelength of around 7.9 μm. Furthermore, high-performance VLWIR single element photodiodes are discussed. The silicon dioxide passivation of VLWIR photodiodes is also presented, which resulted in an approximately 5 times increase of the sidewall resistivity. The latest developments in this material system lend further support for its use as a high-performance alternative for infrared optical systems compared to the current state-of-the-art imaging systems, especially those approaching the long-wavelength and very-long-wavelength infrared.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 008483
Links to Exploration step
Pascal:07-0017458Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes</title><author><name sortKey="Hood, Andrew" uniqKey="Hood A">Andrew Hood</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University</s1><s2>Evanston, Illinois 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, Illinois 60208</wicri:noRegion></affiliation></author><author><name sortKey="Razeghi, Manijeh" uniqKey="Razeghi M">Manijeh Razeghi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University</s1><s2>Evanston, Illinois 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Evanston, Illinois 60208</wicri:noRegion></affiliation></author><author><name sortKey="Nathan, Vaidya" uniqKey="Nathan V">Vaidya Nathan</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Air Force Research Laboratory, AFRL/VSSS, Kirtland AFB</s1><s2>NM 87117</s2><s3>USA</s3><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName></affiliation></author><author><name sortKey="Tidrow, Meimei Z" uniqKey="Tidrow M">Meimei Z. Tidrow</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Missile Defense Agency, 7100 Defense Pentagon</s1><s2>Washington, DC 20301</s2><s3>USA</s3><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Washington, DC 20301</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0017458</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 07-0017458 INIST</idno><idno type="RBID">Pascal:07-0017458</idno><idno type="wicri:Area/Main/Corpus">008483</idno><idno type="wicri:Area/Main/Repository">008651</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Detectivity</term><term>Focal plane arrays</term><term>Indium arsenides</term><term>Infrared detectors</term><term>Optical systems</term><term>Photodiodes</term><term>Quantum yield</term><term>Response functions</term><term>Silicon</term><term>Superlattices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photodiode</term><term>Matrice plan focal</term><term>Système optique</term><term>Rendement quantique</term><term>Fonction réponse</term><term>Superréseau</term><term>Composé binaire</term><term>Indium arséniure</term><term>Silicium</term><term>Détecteur IR</term><term>InAs</term><term>As In</term><term>0757K</term><term>Détectivité</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The authors report on recent advances in the development of mid-, long-, and very long-wavelength infrared (MWIR, LWIR, and VLWIR) type-II InAs/GaSb superlattice infrared photodiodes. The residual carrier background of binary type-II InAs/GaSb superlattice photodiodes of cut-off wavelengths around 5 μm has been studied in the temperature range between 10 and 200 K. A four-point, capacitance-voltage technique on mid-wavelength and long-wavelength type-II InAs/GaSb superlattice infrared photodiodes reveal residual background concentrations around 5 x 10<sup>14</sup> cm<sup>-3</sup>. Additionally, recent progress towards LWIR photodiodes for focal plane array imaging applications is presented. Single element detectors with a cut-off wavelength, λ<sub>c,50%</sub>, of 10.2 μm demonstrated detectivities of approximately 1×10<sup>11</sup> cmHz<sup>1/2</sup>W<sup>-1</sup> and quantum efficiencies of 32% at the peak responsivity wavelength of around 7.9 μm. Furthermore, high-performance VLWIR single element photodiodes are discussed. The silicon dioxide passivation of VLWIR photodiodes is also presented, which resulted in an approximately 5 times increase of the sidewall resistivity. The latest developments in this material system lend further support for its use as a high-performance alternative for infrared optical systems compared to the current state-of-the-art imaging systems, especially those approaching the long-wavelength and very-long-wavelength infrared.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA05><s2>6127</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Quantum sensing and nanophotonic devices III : 23-26 January 2006, San Jose, California, USA</s1></fA09><fA11 i1="01" i2="1"><s1>HOOD (Andrew)</s1></fA11><fA11 i1="02" i2="1"><s1>RAZEGHI (Manijeh)</s1></fA11><fA11 i1="03" i2="1"><s1>NATHAN (Vaidya)</s1></fA11><fA11 i1="04" i2="1"><s1>TIDROW (Meimei Z.)</s1></fA11><fA12 i1="01" i2="1"><s1>RAZEGHI (Manijeh)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>BROWN (Gail J.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University</s1><s2>Evanston, Illinois 60208</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Air Force Research Laboratory, AFRL/VSSS, Kirtland AFB</s1><s2>NM 87117</s2><s3>USA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Missile Defense Agency, 7100 Defense Pentagon</s1><s2>Washington, DC 20301</s2><s3>USA</s3><sZ>4 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>Society of photo-optical instrumentation engineers</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>61270U.1-61270U.11</s2></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA26 i1="01"><s0>0-8194-6169-5</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000153494270210</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0017458</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The authors report on recent advances in the development of mid-, long-, and very long-wavelength infrared (MWIR, LWIR, and VLWIR) type-II InAs/GaSb superlattice infrared photodiodes. The residual carrier background of binary type-II InAs/GaSb superlattice photodiodes of cut-off wavelengths around 5 μm has been studied in the temperature range between 10 and 200 K. A four-point, capacitance-voltage technique on mid-wavelength and long-wavelength type-II InAs/GaSb superlattice infrared photodiodes reveal residual background concentrations around 5 x 10<sup>14</sup> cm<sup>-3</sup>. Additionally, recent progress towards LWIR photodiodes for focal plane array imaging applications is presented. Single element detectors with a cut-off wavelength, λ<sub>c,50%</sub>, of 10.2 μm demonstrated detectivities of approximately 1×10<sup>11</sup> cmHz<sup>1/2</sup>W<sup>-1</sup> and quantum efficiencies of 32% at the peak responsivity wavelength of around 7.9 μm. Furthermore, high-performance VLWIR single element photodiodes are discussed. The silicon dioxide passivation of VLWIR photodiodes is also presented, which resulted in an approximately 5 times increase of the sidewall resistivity. The latest developments in this material system lend further support for its use as a high-performance alternative for infrared optical systems compared to the current state-of-the-art imaging systems, especially those approaching the long-wavelength and very-long-wavelength infrared.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00G57K</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Photodiode</s0><s5>11</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Photodiodes</s0><s5>11</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Matrice plan focal</s0><s5>12</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Focal plane arrays</s0><s5>12</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Système optique</s0><s5>13</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Optical systems</s0><s5>13</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Rendement quantique</s0><s5>41</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Quantum yield</s0><s5>41</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Fonction réponse</s0><s5>42</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Response functions</s0><s5>42</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Superréseau</s0><s5>47</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Superlattices</s0><s5>47</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>51</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>51</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>57</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>57</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Détecteur IR</s0><s5>61</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Infrared detectors</s0><s5>61</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>0757K</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Détectivité</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Detectivity</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>010</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Quantum sensing and nanophotonic devices. Conference</s1><s2>3</s2><s3>USA</s3><s4>2006</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 008651 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 008651 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:07-0017458
|texte= Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes
}}
| This area was generated with Dilib version V0.5.77. |  |